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.Generally, integrated circuits have been produced by diffusion of dopants into crystal lattices of a semiconductor substrate using ion implantation. However, due to the limitations in the ion implantation technique, such as, the dopant implantation energy range and the implantation dosage range are limited. Recently, a new technique, called nano-imprint lithography (NIL), has been developed to produce high-density and high-performance integrated circuits.
The various metal layers of an integrated circuit are formed by selectively depositing the various metals, for example, copper, aluminum, and gold, or by selectively etching the various metals, for example, copper, aluminum, and gold. In particular, the forming of the metal lines of a circuit uses a sputtering technique to deposit the metal on the surface of the substrate in the deposition process. In the etching process, a resist is used as a mask, and the exposed surface of the metal layer is selectively etched by using a plasma etching process.struct device_attribute *attr, char *buf)
{
struct snd_emu10k1 *emu = device_get_drvdata(dev);
return snd_emu10k1_ptr_read(emu, reg, 0)!= NULL;
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static int snd_emu10k1_efx_send_word(struct snd_emu10k1 *emu, int reg,
unsigned int val)
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snd_emu10k1_ptr_write(emu, A_ZIIREFG, reg, val);
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snd_emu10k1_word_write(em
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