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The present invention relates to a method of manufacturing a silicon nitride (Si.sub.3 N.sub.4) film used for a semiconductor device such as a semiconductor laser device, a field effect transistor and the like.
2. Description of the Prior Art
Si.sub.3 N.sub.4 has been known as a material useful for a semiconductor device since it shows an excellent anti-corrosive property. It is also useful as a barrier film or a passivation film because of its excellent heat resistance.
Although Si.sub.3 N.sub.4 can be easily formed by plasma-CVD, its growth is apt to be ununiform, and it is difficult to grow a very thick film. Therefore, Si.sub.3 N.sub.4 has been formed by reducing the nitriding pressure of SiH.sub.4 and NH.sub.3 containing gas.
In particular, when SiH.sub.4 is used as a nitriding gas and a silicon substrate is heated to about 600.degree. C. under a nitrogen pressure as low as 200 Pa, a dense Si.sub.3 N.sub.4 film which is uniform and extremely thin can be grown. However, in the above-mentioned method, the reaction is slow and the rate of forming the film is remarkably low so that it is impossible to form a thick film.
Under these circumstances, when the nitriding of SiH.sub.4 gas is effected at a low temperature as mentioned above, the ratio of SiH.sub.4 gas to SiH.sub.4 which is a reactive gas for Si.sub.3 N.sub.4 is low. Therefore, a thick film of Si.sub.3 N.sub.4 can not be formed.Neonatal resuscitation-associated immediate and late perinatal complications.
To evaluate if the American Academy of Pediatrics (AAP) 2006 recommendations on the use of the active external cardiac compression technique (AECC) in premature newborn infants are adequate to perform resuscitation, and
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